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NTQD6866R2
Power MOSFET
6.9 Amps, 20 Volts
N ? Channel TSSOP ? 8
Features
? New Low Profile TSSOP ? 8 Package
? Ultra Low R DS(on)
? Higher Efficiency Extending Battery Life
? Logic Level Gate Drive
? Diode Exhibits High Speed, Soft Recovery
? Avalanche Energy Specified
? I DSS and V DS(on) Specified at Elevated Temperatures
? Pb ? Free Package is Available
Applications
? Power Management in Portable and Battery ? Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular and Cordless Phones
? Battery Applications
? NoteBook PC
http://onsemi.com
6.9 AMPERES
20 VOLTS
30 m W @ V GS = 4.5 V
N ? Channel N ? Channel
D D
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
Rating Symbol
Value
Unit
G1
G2
Drain ? to ? Source Voltage
Drain ? to ? Gate Voltage (R GS = 1.0 M W )
Gate ? to ? Source Voltage ? Continuous
Thermal Resistance ? Single Die
Junction ? to ? Ambient (Note 1)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ T A = 25 ° C
Pulsed Drain Current (Note 4)
V DSS
V DGR
V GS
R q JA
P D
I D
I DM
20
20
" 12
62.5
2.0
6.9
24
Vdc
Vdc
Vdc
° C/W
W
Adc
Adc
8
S1
S2
MARKING DIAGRAM &
PIN ASSIGNMENT
D D D D
1
Thermal Resistance ? Single Die
Junction ? to ? Ambient (Note 2)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ T A = 25 ° C
Continuous Drain Current @ T A = 70 ° C
Pulsed Drain Current (Note 4)
Thermal Resistance ? Single Die
Junction ? to ? Ambient (Note 3)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ T A = 25 ° C
Continuous Drain Current @ T A = 70 ° C
Pulsed Drain Current (Note 4)
Operating and Storage Temperature Range
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 20 Vdc, V GS = 5.0 Vdc,
Peak I L = 5.5 Apk, L = 10 mH, R G = 25 W )
R q JA
P D
I D
I D
I DM
R q JA
P D
I D
I D
I DM
T J , T stg
E AS
88
1.42
5.8
4.6
20
132
0.94
4.7
3.8
14
? 55 to
+150
150
° C/W
W
Adc
Adc
Adc
° C/W
W
Adc
Adc
Adc
° C
mJ
1 866
YWW
TSSOP ? 8 A G
CASE 948S
PLASTIC
S1 G1 S2 G2
866 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb ? Free Package
ORDERING INFORMATION
Device Package Shipping ?
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
T L
260
° C
NTQD6866R2
TSSOP ? 8
4000/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted onto a 2 ″ square FR ? 4 board
(1 in sq, 2 oz Cu 0.06 ″ thick single ? sided), t < 10 seconds.
2. Mounted onto a 2 ″ square FR ? 4 board
(1 in sq, 2 oz Cu 0.06 ″ thick single ? sided), t = ss.
3. Minimum FR ? 4 or G ? 10 PCB, t = steady state.
4. Pulse Test: Pulse Width = 300 m s, Duty Cycle = 2%.
NTQD6866R2G TSSOP ? 8 4000/Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please refer
to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
? Semiconductor Components Industries, LLC, 2006
March, 2006 ? Rev. 3
1
Publication Order Number:
NTQD6866R2/D
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